研究目的
Investigating the performance of a high-power, high-beam-quality DFB laser with narrow linewidth controlled by gain-coupled effect at 990 nm.
研究成果
The study successfully demonstrates a high-power, high-beam-quality DFB laser with narrow linewidth, achieving a continuous-wave power of over 0.681 W at 3 A and a maximum single-longitudinal-mode power of 0.303 W at 1.4 A. The device exhibits excellent beam quality and spectral properties, making it suitable for applications requiring high beam quality and easy fabrication.
研究不足
The study is limited by the fabrication technique's precision and the potential for heat accumulation within the device at high injection currents, which may affect performance.
1：Experimental Design and Method Selection:
The study involves the design and fabrication of a gain-coupled DFB laser diode based on a ridge waveguide with periodic current injection. The methodology includes the use of standard i-line lithography for fabrication.
2：Sample Selection and Data Sources:
The device is fabricated on a GaAs substrate with an epitaxial layer structure grown by metal organic chemical vapor deposition (MOCVD).
3：List of Experimental Equipment and Materials:
Equipment includes standard i-line lithography tools, inductively coupled plasma (ICP) etching techniques, and a thermoelectric detector for power measurement. Materials include GaAs substrate and epitaxial layers.
4：Experimental Procedures and Operational Workflow:
The process involves patterning periodic shallow-etched grooves, lateral waveguides, and periodic surface metal p-electrodes after epitaxial material growth. The device is then cleaved into bars and single emitters, coated with anti-reflectivity/high-reflectivity films, and mounted for testing.
5：Data Analysis Methods:
The optical output power is measured with a thermoelectric detector, spectrum characterization is measured with a YOKOGAWA AQ6370C optical spectrum analyzer, and linewidth is measured with a Fabry–Perot Interferometer.
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