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Influence of bath temperatures on physical and electrical properties of potentiostatically deposited Cu2O thin films for heterojunction solar cell applications

DOI:10.1007/s11082-019-1745-8 期刊:Optical and Quantum Electronics 出版年份:2019 更新时间:2025-11-19 16:46:39
摘要: In the present work, the influence of bath temperatures on structural, morphological, vibrational, optical, electrical and photo response properties of the electrochemically deposited cuprous oxide (Cu2O) thin films on fluorine doped tin oxide substrate is extensively investigated with the help of X-ray diffraction (XRD), scanning electron microscopy (SEM), Micro Raman spectroscopy, photo luminescence (PL) spectroscopy, UV–visible spectroscopy, LCR measurement, Keithley 4200 semiconductor characterization system respectively. XRD patterns reveal that the deposited Cu2O films have cubic structure grown along the preferential (111) orientation and the film deposited at 40 °C shows better crystalline nature when compared at 55 and 70 °C. The micro structural properties of films such as crystallite size (D), dislocation density (δ), micro strain (ε) and stacking fault probability (α) were calculated and discussed in detail. SEM displays a well-defined three side pyramid shaped morphology for the film deposited at 40 °C. Micro Raman and PL spectra reveal the film deposited at 40 °C by being better crystalline at a higher acceptor concentration. UV–Visible study shows that the optical energy band gap increases from 2.05 to 2.17 eV with an increase in bath temperature from 40 to 70 °C. The frequency-temperature dependence of impedance analysis shows a higher electrical conductivity for a film deposited at 40 °C compared to other bath temperatures. I-V measurement illustrates a good photoconductivity response for Cu2O thin film deposited at 40 °C compared to films deposited at 55 and 70 °C.
作者: K. P. Ganesan,R. Panneerselvam,A. Amali Roselin,G. Sivakumar,N. Anandhan,T. Marimuthu
机构: Advanced Materials and Thin Film Laboratory, Department of Physics, Alagappa University, Karaikudi, Tamil Nadu 630003, India,Department of Physics-CISL, Annamalai University, Annamalai Nagar, Chidambaram, Tamil Nadu 608002, India
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Investigating the influence of bath temperatures on the physical and electrical properties of potentiostatically deposited Cu2O thin films for heterojunction solar cell applications.

The study concludes that Cu2O thin films deposited at 40 °C exhibit superior crystalline quality, higher acceptor concentration, and better photoconductivity response, making them more suitable for heterojunction solar cell applications compared to films deposited at higher temperatures.

The study is limited to the effects of bath temperatures on the properties of Cu2O thin films within the range of 40 to 70 °C. The findings may not be generalizable to other deposition conditions or materials.

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