研究目的
Investigating the influence of bath temperatures on the physical and electrical properties of potentiostatically deposited Cu2O thin films for heterojunction solar cell applications.
研究成果
The study concludes that Cu2O thin films deposited at 40 °C exhibit superior crystalline quality, higher acceptor concentration, and better photoconductivity response, making them more suitable for heterojunction solar cell applications compared to films deposited at higher temperatures.
研究不足
The study is limited to the effects of bath temperatures on the properties of Cu2O thin films within the range of 40 to 70 °C. The findings may not be generalizable to other deposition conditions or materials.
1:Experimental Design and Method Selection:
The study employed electrochemical deposition to prepare Cu2O thin films on fluorine doped tin oxide (FTO) substrates at various bath temperatures (40, 55, and 70 °C). The structural, morphological, vibrational, optical, and electrical properties were analyzed using XRD, SEM, Micro Raman spectroscopy, PL spectroscopy, UV–visible spectroscopy, LCR measurement, and Keithley 4200 semiconductor characterization system.
2:Sample Selection and Data Sources:
FTO glass substrates were used as the working electrode, with platinum and Ag/AgCl serving as counter and reference electrodes, respectively. The deposition solution contained 0.15 M CuSO4·5H2O and 1 M Lactic acid in 30 ml of deionized water, with pH adjusted to around 11 using NaOH.
3:15 M CuSO4·5H2O and 1 M Lactic acid in 30 ml of deionized water, with pH adjusted to around 11 using NaOH. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: X-ray diffraction meter system (X’PERTPRO PAN analytical), scanning electron microscopy (ZEISS), Micro Raman Spectroscopy, Photoluminescence spectroscopy (RF-6000, SHIMADZU), UV–Vis-NIR spectroscopy (UV-1800, SHIMADZU), stylus profilometer, LCR spectroscopy, Keithley semiconductor characterization system
4:Experimental Procedures and Operational Workflow:
42 The Cu2O films were deposited at a constant potential of ?0.4 V for 30 min. The influence of bath temperatures on the properties of Cu2O thin films was studied by varying the temperature from 40 to 70 °C.
5:4 V for 30 min. The influence of bath temperatures on the properties of Cu2O thin films was studied by varying the temperature from 40 to 70 °C. Data Analysis Methods:
5. Data Analysis Methods: The crystallite size was calculated using Debye–Scherrer’s equation, dislocation density and micro strain were estimated using specific equations, and the optical band gap was determined using Tauc’s plots.
独家科研数据包,助您复现前沿成果,加速创新突破
获取完整内容-
X-ray diffraction meter system
X’PERTPRO PAN analytical
PANalytical
Studying the crystal structure of the films
暂无现货
预约到货通知
-
Scanning electron microscopy
ZEISS
ZEISS
Surface morphological study
暂无现货
预约到货通知
-
Photoluminescence spectroscopy
RF-6000
SHIMADZU
Studying the luminescence properties of Cu2O thin films
-
UV–Vis-NIR spectroscopy
UV-1800
SHIMADZU
Exploring optical absorbance, transmittance and band gap of the films
暂无现货
预约到货通知
-
Keithley semiconductor characterization system
4200
Keithley
Carrying out photoconductivity (I-V) of the Cu2O films
暂无现货
预约到货通知
-
Micro Raman Spectroscopy
Not provided
Not provided
Analyzing the vibrational properties of the Cu2O films
暂无现货
预约到货通知
-
Stylus profilometer
Not provided
Not provided
Measuring thickness of the films
暂无现货
预约到货通知
-
LCR spectroscopy
Not provided
Not provided
Studying electrical properties of the thin films
暂无现货
预约到货通知
-
登录查看剩余6件设备及参数对照表
查看全部