研究目的
Investigating strategies to improve the performance of Se-derivative based solar cells, focusing on the use of ZnO nanoparticles as an electron-transport layer and the effect of gallium content in the alloy.
研究成果
The implementation of a compact film of ZnO NPs as an n-type semiconductor in Ga-Se alloy based solar cells significantly improves device performance, achieving a power conversion efficiency of 2.7%. The study highlights the importance of optimizing the thickness of the active layer and the gallium content in the alloy for enhanced solar cell performance.
研究不足
The study is limited to the evaluation of ZnO nanoparticles and GaxSe10-x alloys in solar cells. The performance under different environmental conditions and long-term stability beyond three months were not extensively explored.
1:Experimental Design and Method Selection
The study involves the synthesis of ZnO nanoparticles films by sol-gel process and GaxSe10-x material by mechanical alloying. The performance of solar cells was evaluated using current-voltage measurements, impedance spectroscopy, and capacitance-voltage profiling.
2:Sample Selection and Data Sources
Se (Aldrich, purity > 99.99%) and Ga (Aldrich, purity > 99.95%) were used as starting materials for the synthesis of GaxSe10-x alloys. Transparent electrodes were prepared from thin film coatings of fluorine-doped tin oxide (FTO) on glass.
3:List of Experimental Equipment and Materials
Fritsch Pulverisette 7 Premium planetary ball mill, Shimadzu XRD-7000 X-ray diffractometer, FEI Phenom scanning electron microscope, Perkin Elmer Lambda 1050 UV–vis spectrophotometer, Bruker DektakXT surface profiler, Oriel Solar simulator, Keithley 6487 picoammeter, Agilent 4284A LCR meter.
4:Experimental Procedures and Operational Workflow
ZnO nanoparticles solution was deposited over the FTO by spin-coating. The active layer was thermally evaporated on top of the FTO/ZnO NPs substrates. Gold back contacts were deposited by thermal evaporation. The crystalline phase of GaxSe10-x active layer was obtained by thermal treatment.
5:Data Analysis Methods
The electrical characterization of solar cell devices was performed by current density – voltage measurements under AM 1.5 G 100 mW/cm2 irradiance or darkness. Capacitance and impedance measurements were performed with an Agilent 4284A LCR meter.
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Shimadzu XRD-7000 X-ray diffractometer
XRD-7000
Shimadzu
Used for structural characterization of ZnO NPs and GaxSe10-x films.
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FEI Phenom scanning electron microscope
Phenom
FEI
Used for morphological characterization of ZnO NPs and GaxSe10-x films.
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Perkin Elmer Lambda 1050 UV–vis spectrophotometer
Lambda 1050
Perkin Elmer
Used for optical characterization of ZnO NPs and GaxSe10-x films.
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Bruker DektakXT surface profiler
DektakXT
Bruker
Used for determining layer thickness.
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Keithley 6487 picoammeter
6487
Keithley
Used for current density – voltage measurements.
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Agilent 4284A LCR meter
4284A
Agilent
Used for capacitance and impedance measurements.
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Fritsch Pulverisette 7 Premium planetary ball mill
Pulverisette 7 Premium
Fritsch
Used for mechanical alloying of GaxSe10-x alloys.
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Oriel Solar simulator
Not provided
Oriel
Used for electrical characterization of solar cell devices under AM 1.5 G illumination.
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