研究目的
Investigating the use of aluminum-doped zinc oxide (ZnO:Al) as a replacement for indium tin oxide (ITO) in the front contact of silicon heterojunction (SHJ) solar cells in the rear emitter configuration to achieve high efficiency.
研究成果
ZnO:Al can be used as a front TCO in rear emitter SHJ solar cells with only a minimal efficiency loss compared to ITO, demonstrating its potential as a cost-effective and indium-free alternative. The higher contact resistivity between ZnO:Al and the silver grid is identified as the main factor limiting its performance, suggesting areas for further optimization.
研究不足
The study found that ZnO:Al layers have a higher contact resistivity with the silver grid compared to ITO, which slightly reduces the fill factor and overall efficiency of the solar cells. The optical absorption of ZnO:Al is also slightly higher than that of ITO, which could affect the short-circuit current density.
1:Experimental Design and Method Selection:
The study involved the deposition of ZnO:Al and ITO layers on glass and SHJ solar cells using a pulsed DC magnetron sputtering system. The optical and electrical properties of these layers were characterized to compare their performance.
2:Sample Selection and Data Sources:
Samples included ZnO:Al and ITO layers deposited under varying oxygen concentrations, and SHJ solar cells with these layers as front contacts. Data were obtained from Hall measurements, four-point probe measurements, and optical spectrometry.
3:List of Experimental Equipment and Materials:
Equipment included a pulsed DC magnetron sputtering system, Hall measurement setup, four-point probe, and optical spectrometry equipment. Materials included low iron soda-lime glass, ZnO:Al and ITO targets, and n-type Cz-Si wafers.
4:Experimental Procedures and Operational Workflow:
The layers were deposited under controlled oxygen partial flows, characterized for their electrical and optical properties, and implemented in SHJ solar cells. The solar cells were then tested for performance under standard conditions.
5:Data Analysis Methods:
Data analysis involved comparing the sheet resistance, contact resistance, and optical absorption of the ZnO:Al and ITO layers, and evaluating the solar cell performance metrics such as power conversion efficiency, fill factor, and short-circuit current density.
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Perkin-Elmer LAMBDA 1050 UV/Vis/NIR Spectrophotometer
LAMBDA 1050
Perkin-Elmer
UV-VIS spectrometry measurements
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pulsed DC magnetron sputtering system
A600V7
Leybold Optics
Deposition of ZnO:Al and ITO layers
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rotatable target
99:1 wt % ZnO:Al2O3
Used for ZnO:Al deposition
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planar target
97:3 wt % In2O3:SnO2
Used for ITO deposition
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AKT1600 plasma-enhanced chemical vapor deposition (PECVD) cluster tool
AKT1600
Applied Materials
Deposition of amorphous intrinsic and doped silicon layers
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Sinton Instruments WCT120
WCT120
Sinton Instruments
Intensity-dependent open circuit voltage (SunsVoc) measurements
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