研究目的
Investigating the continuous wave operation of a GaN-based VCSEL with lateral optical confinement by a curved mirror to achieve a low threshold current.
研究成果
The study demonstrated CW operation of a GaN-based VCSEL with a curved mirror, achieving the lowest threshold current recorded for such devices. This advancement is significant for the miniaturization of GaN-based VCSELs.
研究不足
The study does not quantitatively clarify the mechanism for the reduction of the threshold current. Further investigation is required to understand the factors contributing to the low threshold current.
1：Experimental Design and Method Selection:
The study focused on the fabrication and characterization of a GaN-based VCSEL with a curved mirror for lateral optical confinement and boron ion implantation for lateral current confinement.
2：Sample Selection and Data Sources:
The device was fabricated on a {0001} GaN substrate with epilayers consisting of n-GaN, quantum wells, and p-GaN.
3：List of Experimental Equipment and Materials:
Equipment included SEM (Hitachi High-Technologies S-4700), confocal laser scanning microscopy (Keyence VK-9710), AFM (Bruker Dimension Icon), and a spectrum analyzer (Yokogawa AQ6373). Materials included ITO, Ta2O5/SiO2 DBRs, and Ti/Pt/Au electrodes.
4：3). Materials included ITO, Ta2O5/SiO2 DBRs, and Ti/Pt/Au electrodes. Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The fabrication involved epitaxial growth, DBR formation, boron ion implantation, electrode formation, wafer polishing, curved mirror fabrication, and device characterization.
5：Data Analysis Methods:
The emission spectrum and I-V characteristics were analyzed to determine the threshold current and lasing wavelength.
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SEM
S-4700
Hitachi High-Technologies
Cross-sectional scanning electron microscopy for dimensional characterization.
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AFM
Dimension Icon
Bruker
Measurement of the roughness of the top of the curved surface formed on GaN.
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