摘要： In this work, we experimentally study the optical Kerr nonlinearities of graphene/Si hybrid waveguides with enhanced self-phase modulation. In the case of CMOS compatible materials for nonlinear optical signal processing, Si and silicon nitride waveguides have been extensively investigated over the past decade. However, Si waveguides exhibit strong two-photon absorption (TPA) at telecommunication wavelengths, which leads to a signi?cant reduction of the nonlinear ?gure-of-merit (FOM). In contrast, a silicon nitride based material system usually suppresses the TPA but simultaneously leads to the reduction of Kerr nonlinearity by one order of magnitude. Here, we introduce a graphene/Si hybrid waveguide, which maintains the optical properties and CMOS compatibility of Si waveguides, while enhancing the Kerr nonlinearity, by transferring over to the top of the waveguides. The graphene/Si waveguides are measured to have an enhanced nonlinear parameter of 510 W(cid:2)1 m(cid:2)1, compared with that of the Si waveguide of 150 W(cid:2)1 m(cid:2)1. An enhanced nonlinear FOM of 2.48 6 0.25 has been achieved, which is four times larger than that of the Si waveguide of 0.6 6 0.1. This work reveals the potential application of graphene/Si hybrid waveguides with high Kerr nonlinearity and FOM for nonlinear all-optical signal processing.