研究目的
To illustrate a technology for advanced light management by introducing a nonconventional back reflector layer (BRL) in amorphous silicon (a-Si:H) solar cells using silver sulfide (Ag2S) nanoparticles as the nano-mirror.
研究成果
The incorporation of Ag2S nanoparticle embedded ITO as the back reflector layer in a-Si:H solar cells significantly enhances light trapping, particularly in the longer wavelength region, leading to an improved photo-conversion efficiency of 10.58%. This approach demonstrates the potential of semiconductor nanoparticles in advanced light management for thin-film solar cells.
研究不足
The study does not extensively explore the optimization of Ag2S nanoparticle size and their area of coverage, which could potentially further enhance the solar cell's performance. Additionally, the impact of the BRL on the fill factor of the solar cells was noted as a limitation, with a slight decrease observed.
1:Experimental Design and Method Selection:
The study involved the fabrication of a-Si:H solar cells with a novel BRL consisting of Ag2S nanoparticles embedded between two ITO layers. The rationale behind this design was to enhance light trapping within the active layers of the solar cell.
2:Sample Selection and Data Sources:
Colloidal N-acetyl cysteine capped Ag2S NPs were synthesized and used to form the BRL. The solar cells were fabricated on FTO coated glass substrates.
3:List of Experimental Equipment and Materials:
Equipment included a Zeiss Sigma scanning electron microscope for FESEM, NT-MDT Solver NEXT atomic force microscope for AFM, a pulsed DC magnetron sputtering system for ITO deposition, and a PECVD unit for solar cell fabrication. Materials included AgNO3, NaBH4, N-acetyl cysteine, and ITO.
4:Experimental Procedures and Operational Workflow:
The Ag2S NPs were spin-coated on an ITO layer, followed by the deposition of another ITO layer to form the BRL. The solar cells were then fabricated using PECVD, with the BRL incorporated into one set of cells for comparative study.
5:Data Analysis Methods:
Reflectance measurements were performed using a UV-Vis-NIR spectrophotometer, J-V characteristics were measured under AM 1.5G illumination, and EQE was measured using an incident photo-current efficiency measurement system. Numerical calculations were performed using COMSOL? Multiphysics to validate the experimental outcomes.
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Zeiss Sigma scanning electron microscope
Sigma
Zeiss
To study the morphology of the dispersed Ag2S NPs on the glass substrates.
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PECVD unit
CT-150
Hind High Vac
For the fabrication of the a-Si:H solar cells.
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UV-Vis-NIR spectrophotometer
Solid Spec–3700
Shimadzu
To perform the reflectance measurements.
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Spectroscopic ellipsometry
ALPHA-SE series
J.A. Woollam
To measure the film thickness, optical band gap, and refractive index.
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NT-MDT Solver NEXT atomic force microscope
Solver NEXT
NT-MDT
To investigate the topography of the ITO/Ag2S/ITO structure.
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Pulsed DC magnetron sputtering system
MM-196
MILMAN
For the deposition of the indium tin oxide (ITO) layers.
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Solar Simulator
Oriel Sol 3A
To measure the current density-voltage (J-V) characteristics of devices under AM 1.5G simulated illumination.
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Incident photo-current efficiency measurement system
PVE-300
Bentham
To measure external quantum efficiency (EQE).
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