研究目的
Investigating the impacts of lattice defects in the SnNb2O6 photoanode on the water oxidation property.
研究成果
The suppression of Sn atoms substituting the Nb site is effective for realizing more negative onset potential and increasing the photocurrent in the SnNb2O6 photoanode. Further optimization of the Sn/Nb ratio and improvement of the morphology of the film yields high-efficient photoanodes.
研究不足
The photocurrent density observed for the SnNb2O6 thin-film photoanodes was small compared with that observed in the SnNb2O6 photoanode prepared by the particle transfer method, probably due to the unsuitable morphology of the present SnNb2O6 crystals constructing the thin-film photoanode.
1：Experimental Design and Method Selection:
The SnNb2O6 thin-film photoanodes were prepared with various Sn/Nb ratios by a pulsed-laser deposition method.
2：Sample Selection and Data Sources:
The films were prepared with different NNb to NSn ratios.
3：List of Experimental Equipment and Materials:
A KrF excimer laser, SnO2 and Nb2O5 targets, ITO substrates, and a three-electrode system for photoelectrochemical measurements.
4：Experimental Procedures and Operational Workflow:
The films were deposited on ITO substrates, followed by photoelectrochemical measurements and Raman spectroscopy analyses.
5：Data Analysis Methods:
The photoelectrochemical properties were measured under simulated sunlight irradiation, and the Raman spectra were analyzed to evaluate the influence of lattice defects.
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