研究目的
To evaluate the crystallinity dependent exciton diffusion length of C60 (LC60) in highly oriented fullerene films on p-Si (100) substrates.
研究成果
The study concluded that the exciton diffusion length (LC60) for highly oriented C60 was 60 nm, which was longer than that of disordered C60 films. The ordered C60 structure was effective for smooth exciton diffusion, and the optimum thickness of ordered C60 was estimated to be 100 nm by the simulation.
研究不足
The study is limited by the approximation of the Si layer in the simulation, especially when the C60/p-Si interface recombination is significant. The estimated LC60 included errors due to this approximation.
1：Experimental Design and Method Selection:
Highly oriented fullerene (C60) films were fabricated on p-Si (100) substrates to evaluate LC60. The crystal structure was examined using grazing incidence X-ray diffraction (GIXD).
2：The crystal structure was examined using grazing incidence X-ray diffraction (GIXD).
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: p-Type Si(100) substrates were cleaned and used for the fabrication of C60 films by molecular beam deposition.
3：List of Experimental Equipment and Materials:
X-ray diffraction (XRD; SmartLab, Rigaku, Cu Kα1 parallel beam X-ray source), atomic force microscope (AFM; Nano-navi, SII), and synchrotron radiation (BL46XU beamline at SPring-8) were used.
4：Experimental Procedures and Operational Workflow:
The C60 films were examined using XRD for out-of-plane scan, in-plane scan, in-plane rocking scan, and pole figure measurements. Topographic images of the fabricated C60 layers were obtained using AFM.
5：Data Analysis Methods:
The exciton diffusion length was estimated from the incident photon-to-current conversion efficiency (IPCE) spectra using one-dimensional-optical simulation.
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