研究目的
Investigating the integration of photonic structures and optoelectronic sensors into a single chip for spectroscopic infrared sensing.
研究成果
The study successfully demonstrates an on-chip quad-wavelength membrane sensor operating in the MWIR atmospheric window region, with narrow bandwidths and nearly perfect absorptivities. The device shows potential for practical spectroscopic applications.
研究不足
The spectral linewidth of the output IR laser is broader compared to the absorption bandwidth of IR sensors, causing broadening of the spectral response. The sensor size is on the order of millimeters, though it can be scaled down.
1：Experimental Design and Method Selection:
The study employs numerical simulations (RCWA and FDTD methods) for optical and thermal properties optimization, and a fabrication process involving direct laser writing lithography, film deposition, lift-off processes, reactive-ion etching (RIE), and anisotropic wet-etching.
2：Sample Selection and Data Sources:
A 3 in. double side polished Si wafer with a 100 nm thermally oxidized layer and a 350 nm sputtered Si3N4 film is used.
3：List of Experimental Equipment and Materials:
Includes a direct laser writing system, electron beam evaporator, sputtering system, RIE system, and SEM for characterization.
4：Experimental Procedures and Operational Workflow:
Fabrication involves patterning photoresist, depositing films, etching, and membrane formation.
5：Data Analysis Methods:
Spectral response and temporal response measurements are conducted using a tunable IR laser system and oscilloscope.
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optical parametric amplifier
TOPAS-Prime
Spectra-Physics
Used for extending the spectral range of the output laser.
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voltage amplifier
SR560
Stanford Research Systems
Used for preamplifying the signal from the IR sensor.
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source meter
ADCMT 8252
ADCMT
Used for measuring the signal from the IR sensor.
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thermal power sensor head
S401C
Thorlabs
Used for measuring the spectral power distribution of the output IR laser.
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power meter console
PM100D
Thorlabs
Used with the thermal power sensor head for power measurement.
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oscilloscope
TDS 520A
Tektronix
Used for measuring the temporal response of the fabricated IR sensor.
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SEM
Hitachi SU8230
Hitachi
Used for morphological characterization of the fabricated sensors.
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focused ion beam miller
Hitachi FB-2100
Hitachi
Used for creating cross-sectional views of the sensors.
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tunable IR laser system
Solstice
Spectra-Physics
Used as a tunable excitation source for spectral response measurement.
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direct laser writing system
μPG 101
Heidelberg Instruments
Used for patterning photoresist in the fabrication process.
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electron beam evaporator
UEP-300-2C
ULVAC
Used for depositing Pt and Au films.
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sputtering system
i-Miller CFS-4EP-LL
Shibaura
Used for depositing Si3N4 and ZnO films.
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RIE system
Ulvac CE-300I
Ulvac
Used for etching Si and Si3N4.
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lock-in amplifier
LI5640
NF Corporation
Used for gaining the signal from the IR sensor.
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