研究目的
Investigating the use of fluorine ion implantation to adjust the threshold voltage of AlGaN/GaN high-electron-mobility-transistor (HEMT) terahertz detectors for optimal performance at zero gate voltage or with the gate floating.
研究成果
Fluorine ion implantation effectively shifts the threshold voltage of AlGaN/GaN HEMT terahertz detectors, enabling optimal performance at zero gate voltage. This technique facilitates the design of large arrays of antenna-coupled HEMT detectors without the need for negative gate voltage lines, though it requires further optimization to mitigate the degradation in electron mobility.
研究不足
The reduction in electron mobility and field-effect factor due to ion implantation-induced damage and impurity scattering, which affects the detector's responsivity and NEP.
1：Experimental Design and Method Selection:
The study involves the fabrication of two-terminal antenna-coupled AlGaN/GaN HEMT self-mixing terahertz detectors using fluorine ion implantation to adjust the threshold voltage.
2：Sample Selection and Data Sources:
Five different detectors with varying fluorine ion implantation doses were prepared.
3：List of Experimental Equipment and Materials:
A SEN NV-GSD-HE ion implanter was used for fluorine ion implantation. The detectors were annealed at 400°C for 10 min after implantation.
4：Experimental Procedures and Operational Workflow:
The detectors were characterized using a Schottky diode frequency multiplier chain (
5：1–1 THz) and a standard lock-in technique for signal readout. Data Analysis Methods:
The relationship between ion dosage and detector parameters (threshold voltage, electron mobility, electron density, responsivity, and NEP) was analyzed.
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