研究目的
Investigating the implementation of a tunable dual-longitudinal-mode spacing InGaN/GaN green laser diode for applications in millimeter wave and THz generation, high-resolution imaging, and broadband wireless communication.
研究成果
The study successfully demonstrated a tunable dual-longitudinal-mode spacing InGaN/GaN green laser diode with a wide range of tunable mode spacing and calculated beat frequency. The system showed excellent stability and potential for applications in THz generation and optical communications. Future work could explore the use of high-power laser diodes and automated tuning methods to enhance performance.
研究不足
The study was limited by manual tuning methods, which may affect the system's repeatability and smooth tunability. The use of piezo stages could potentially improve these aspects.
1：Experimental Design and Method Selection:
The study employed a self-injection locking scheme based on an external cavity configuration using either a high or partial-reflecting mirror.
2：Sample Selection and Data Sources:
An off-the-shelf InGaN/GaN green laser diode (Thorlabs L520P50) was used.
3：List of Experimental Equipment and Materials:
Equipment included an aspheric lens, a pellicle beam splitter, a high-resolution optical spectrum analyzer, and various mirrors and mounts.
4：Experimental Procedures and Operational Workflow:
The output light beam was collimated, split, and reflected back into the laser active region to enable optical feedback. The system's performance was analyzed under varying operating currents and temperatures.
5：Data Analysis Methods:
The side-mode-suppression ratio and dual-mode peak optical power ratio were measured to evaluate system performance.
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