研究目的
To design an electron passing (Ohmic) contact for n-type Si that is hole-blocking with significantly reduced hole recombination for ultra-thin-film c-Si solar cells.
研究成果
The study demonstrates a carrier-selective contact with a TiO2 MIS structure, achieving a Voc of 645 mV in a 2 μm-thick Si solar cell, which is 10 mV higher than that of a comparable cell with metal contact. The results show that eliminating contact recombination is essential to the design of high-efficiency c-Si cells. The TiO2 MIS contact represents a significant step towards high-efficiency ultra-thin-film c-Si solar cells.
研究不足
The study is limited to ultra-thin-film c-Si solar cells with a thickness of 2 μm. The performance of the cells could be further improved by applying nano-scale light trapping structures to increase the short circuit current (J sc).
1：Experimental Design and Method Selection:
The study involves the design and simulation of carrier-selective contacts in c-Si solar cells using Synopsys Technology Computer-Aided Design (TCAD). The experimental method includes the fabrication of ultra-thin-film c-Si solar cells with a TiO2 MIS contact and characterization of their performance.
2：Sample Selection and Data Sources:
The cells are fabricated on a silicon-on-insulator (SOI) wafer to precisely control the cell thickness.
3：List of Experimental Equipment and Materials:
Equipment includes a standard solar simulator, a certified photodetector, a lock-in amplifier, and a Sinton Instrument WCT-
4：Materials include a SOI wafer, TiO2, Tetrakis (dimethylamido) titanium (IV), DI water steam, titanium (Ti), and aluminum (Al). Experimental Procedures and Operational Workflow:
1 The process involves epitaxial deposition by chemical vapor deposition (CVD), oxidation, photolithography, dry etch, atomic layer deposition (ALD) of TiO2, e-beam evaporation of metal contacts, and annealing.
5：Data Analysis Methods:
The performance of the solar cells is analyzed using current-density-voltage (J-V) characteristics, external quantum efficiency (EQE) measurements, and quasi-steady-state open circuit voltage (QSSVoc) method.
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