研究目的
Investigating the performance of deeply-scaled GaN-on-Si high electron mobility transistors for mm-wave applications.
研究成果
The study demonstrated a record-high cut-off frequency of 310 GHz in a deeply-scaled GaN-on-Si HEMT, with a Johnson’s FOM of 4.65 THz·V, comparable to GaN-on-SiC devices. These findings highlight the potential of GaN-on-Si transistors for low-cost mm-wave applications.
研究不足
The short channel effect needs further suppression despite the use of a 9 nm InAlN barrier. The interface quality and parasitic capacitance introduced by the Al2O3 layer could be optimized.
1：Experimental Design and Method Selection:
The study focused on the fabrication and characterization of GaN-on-Si HEMTs with a deeply-scaled gate length of 40 nm.
2：Sample Selection and Data Sources:
The samples were fabricated on a 4” high-resistivity Si (111) substrate with an InAlN/GaN heterojunction structure.
3：List of Experimental Equipment and Materials:
Key materials included Ti/Al/Ni/Au for ohmic contacts and Ni/Au for gate metallization. Equipment included an Agilent B1505 semiconductor device analyzer and an Agilent PNA N5244A network analyzer for DC and RF characterization, respectively.
4：Experimental Procedures and Operational Workflow:
The fabrication involved mesa isolation, ohmic contact formation, gate patterning using electron beam lithography, and gate metallization. A thin Al2O3 layer was deposited for surface passivation.
5：Data Analysis Methods:
The DC and RF performance were analyzed, including drain current, transconductance, cut-off frequency, and breakdown voltage.
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