研究目的
Investigating the laser modification of the surface of monocrystalline silicon under the influence of a double femtosecond laser pulse with varying delays less than or close to the electron–phonon interaction time.
研究成果
The irradiation of monocrystalline silicon with a single double femtosecond laser pulse with delay times much less or close to the electron–phonon interaction time allowed to separate the electrophysical and thermal processes and investigate the possibility of accumulation processes in the electron subsystem of a semiconductor.
研究不足
The simplified numerical model does not take into account the peculiarities of the excitation of SEW and CSW, and interference phenomena.
1：Experimental Design and Method Selection:
The study involved irradiating monocrystalline silicon with a series of double femtosecond laser pulses with varying delays.
2：Sample Selection and Data Sources:
Polished monocrystalline silicon plates with a thickness of 380 μm and (100) crystallographic surface orientation were used as samples.
3：List of Experimental Equipment and Materials:
TiF-100-F4 titanium sapphire laser, RAP-1500 regenerative amplifier, SOLO2 energy meter, Axio Imager.A1m microscope with a CCD camera AxioCam ICc3, Michelson interferometer.
4：Experimental Procedures and Operational Workflow:
The sample was irradiated with a series of double femtosecond laser pulses with varying delays, and the surface modification was studied.
5：Data Analysis Methods:
The dynamics of the concentration of photoexcited carriers and the space–time distribution of the real part of the complex dielectric permittivity were calculated.
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