研究目的
To propose a facile approach for the preparation of white LED by fabricating n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN heterojunction LEDs and investigating their device properties.
研究成果
The study successfully fabricated n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN heterojunction LEDs with tunable blue and yellow light emission intensities by adjusting fabrication parameters and introducing a semi-insulating i-ZnO layer. A facile approach for the preparation of white LED was proposed, demonstrating the potential for wide applications.
研究不足
The study mentions the high current leakage under reverse bias likely caused by the band offset of the heterojunction, leading to severe generation of heat. The reproducibility and high-quality p-ZnO and the fabrication of ZnO homojunction are still problematic due to defects acting as p-type doping compensating centers.
1：Experimental Design and Method Selection:
The study utilized pulsed laser deposition (PLD) to deposit ZnO films on GaN substrates under different oxygen pressures to fabricate n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN heterojunction LEDs.
2：Sample Selection and Data Sources:
High-quality n-ZnO films were prepared on p-GaN substrates, with variations in oxygen pressure during deposition to study its effects on the heterojunction properties.
3：List of Experimental Equipment and Materials:
A PLD system, X-ray diffractometer (XRD), photoluminescence (PL) characterizations, Hall effect testing instrument, and X-ray photoelectron spectroscopy (XPS) were used.
4：Experimental Procedures and Operational Workflow:
The process involved depositing ZnO films at different O2 pressures, fabricating the heterojunction LEDs, and characterizing their electrical and optical properties.
5：Data Analysis Methods:
The study analyzed the crystal structure, optical properties, and electrical properties of the films and heterojunctions, and discussed the luminescence mechanism.
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