摘要： Bi(Ni2/3Ta1/3)O3-PbTiO3 ceramics doped with different La contents were prepared using the conventional solid-state reaction route. The electric properties of La-doped Bi(Ni2/3Ta1/3)O3-PbTiO3 ceramics were compared with those of non-La ceramics. As the incorporated La content increased, the Curie temperature TC decreased linearly, whereas the dielectric constant ε'RT at room temperature increased. Although the remnant polarization Pr decreased, the bipolar strain S (%) increased as the La content increased, owing to phase transition from the ferroelectric phase to the paraelectric phase. The maximum bipolar strain S (0.42%) was observed in the Bi0.7La0.3(Ni2/3Ta1/3)O3-PbTiO3 ceramics. When the La content reached 50%, the ferroelectric performance deteriorated. After La was doped into the Bi(Ni2/3Ta1/3)O3-PbTiO3 ceramics, the photovoltages were markedly improved. The photovoltage (27 V) reached its maximum with 15% La content but was reduced to 0 V with 50% La doping content owing to a decline in ferroelectricity. The speed of the photovoltaic response to the incident light for this system was about 0.5 ms. Therefore, the strain and the photovoltaic properties of the La-doped Bi(Ni2/3Ta1/3)O3-PbTiO3 ceramics were markedly improved relative to those of undoped ceramics.