研究目的
Investigating the photovoltaic action in γ-CuI/β-Ga2O3 heterojunction under ultraviolet radiation for self-powered UV photodetector applications.
研究成果
The γ-CuI/β-Ga2O3 heterostructure device demonstrated excellent rectifying characteristics and photovoltaic action under UV radiation, making it suitable for self-powered UV photodetector applications.
研究不足
The study is limited by the specific conditions of the thermal evaporation process and the performance of the heterojunction under varying UV wavelengths and intensities.
1：Experimental Design and Method Selection:
The γ-CuI was deposited on β-Ga2O3 by thermal evaporation under vacuum.
2：Sample Selection and Data Sources:
Sn-doped single-crystal β-Ga2O3 was used.
3：List of Experimental Equipment and Materials:
Thermal evaporator, SEM, Raman spectrometer, XPS analyzer, Keithley 2401 Source Meter.
4：Experimental Procedures and Operational Workflow:
Fabrication of γ-CuI/β-Ga2O3 heterostructure, characterization by SEM and Raman spectroscopy, electrical analysis under UV illumination.
5：Data Analysis Methods:
Analysis of J-V characteristics under dark and UV illumination conditions.
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