摘要： All-inorganic cesium lead halide perovskites (CsPbX3) have emerged as one of the most promising photovoltaic materials due to their superior thermal stability. However, the high phase transition temperatures (typically over 250 ?C) of CsPbX3 perovskites are incompatible with flexible substrates. Herein, we employed a simple hot-casting method to fabricate low-temperature processed CsPbI2Br films. By casting the perovskite precursor solution onto a hot substrate (maintained at 55 ?C), compact, large-grain and pinhole-free CsPbI2Br films can be prepared at a low post-annealing temperature, which outperform the conventional room temperature (RT)-casting and high-temperature (post-annealing at 340 ?C) processed CsPbI2Br films containing some voids. As a result, the hot-casting and low-temperature (post-annealing at 120 ?C) processed CsPbI2Br perovskite solar cells (PSCs) exhibited an outstanding power conversion efficiency (PCE) of 12.5%, which is much higher than that (2.91%) of the RT-casting processed CsPbI2Br devices. Further optimization of the post-annealing temperature (optimized value: 180 ?C) yielded the best performance of 13.8% for hot-casting processed CsPbI2Br devices. This study gives an effective and facile strategy toward low-temperature processed all-inorganic perovskite films and high-performance PSCs.