研究目的
Investigating the development of wavelength-extended InGaAs photodetectors with cutoff wavelength >1.7 μm, focusing on the effects of various InGaAs/InAlAs p-i-n heterojunction structures grown on InP and GaAs substrates by gas source molecular beam epitaxy.
研究成果
The development of InP- and GaAs-based wavelength-extended InxGa1?xAs (x > 0.53) photodetectors with relatively high lattice mismatch has achieved remarkable success in SWIR band especially for the applications at higher operation temperatures and robust circumstances. By designing of abrupt interface and appropriate buffer, the initial dislocation nucleation process may pave a way of development of lattice-mismatched device structures.
研究不足
The high densities of threading dislocations (TDs) and electron traps in the active region due to the relatively high-lattice mismatch have hindered the development of GaAs-based In0.83Ga0.17As photodetectors.
1：Experimental Design and Method Selection:
Various InGaAs/InAlAs p-i-n heterojunction structures were grown on InP and GaAs substrates by gas source molecular beam epitaxy (GSMBE). Techniques such as linearly, step, and one-step continuously InAlAs graded buffer, and dislocation restraint methods of compositional overshoot and digital alloy were introduced.
2：Sample Selection and Data Sources:
InGaAs photodetector structures with different buffer schemes were grown and evaluated.
3：List of Experimental Equipment and Materials:
VG Semicon V80H gas source molecular beam epitaxy (GSMBE) system was used for material growth.
4：Experimental Procedures and Operational Workflow:
The growth rates were adjusted to about 1 μm/h for InP, InAlAs, and InGaAs. The growth temperature was optimized for each layer.
5：Data Analysis Methods:
Material characteristics and device properties were evaluated by atomic force microscopy, high-resolution X-ray diffraction and reciprocal space mapping, cross-sectional transmission electron microscopy, and current-voltage measurements.
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