摘要： In a ?ne pitch ?ip chip package, a laser-assisted bonding (LAB) technology has recently been developed to overcome several reliability and throughput issues in the conventional mass re?ow (MR) and thermal compression bonding technology. This study investigated the LAB process for a ?ip chip package with a copper (Cu) pillar bump using numerical heat transfer and thermo-mechanical analysis. During the LAB process, the temperature of the silicon die was uniform across the entire surface and increased to 280 (cid:3)C within a few seconds; this was high enough to melt the solder. The heat in the die was quickly conducted to the substrate through the Cu pillar bumps. Meanwhile, the substrate temperature was low and remained constant. Therefore, a stable solder interconnection was quickly achieved with minimal stress and thermal damage to the package. The substrate thickness, the number of Cu bumps, and the bonding stage temperature were found to be important factors affecting the heat transfer behavior of the package. The temperature of the die decreased when a thinner substrate, a higher number of Cu bumps, and a lower bonding stage temperature were used. If the temperature of the die was not suf?ciently high, insuf?cient heat was transferred to the solder to melt it, resulting in incomplete solder joint formation. Thermo-mechanical analysis also showed that the LAB process produced lower warpage and thermo-mechanical strain than the conventional MR process. These results indicated that a LAB process using a selective local heating method would be bene?cial in reducing thermo-mechanical stress and increasing throughput for the ?ne pitch ?ip chip packages.