摘要： Heterojunctions, composed of different materials, are widely explored in optoelectronic devices thanks to their unique advantages, such as high carrier mobility and excellent photoelectronic characteristics. In this work, Bi2Se3/Te@Se heterojunctions (Bi2Se3/Te@Se) are synthesized through the epitaxial growth of Bi2Se3 nanosheets (Bi2Se3 NTs) on tellurium@selenium nanotubes (Te@Se NTs) by using a low-cost and facile solvothermal process. Bi2Se3/Te@Se are further applied in high-performance photoelectrochemical (PEC)-type photodetection due to the advantages of broadband optical response and fast carrier relaxation time. The PEC results demonstrate that the as-prepared photodetectors have pronounced photoresponse behavior from the ultraviolet to visible band with self-driven ability and excellent long-term stability. It is anticipated that this work provides a new strategy for epitaxial growth of topological insulators on semiconductors for designing new heterojunctions toward high-performance optoelectronic devices.