1：Experimental Design and Method Selection:

Single crystal β-tellurium nanowires were grown on flexible muscovite by molecular beam epitaxy (MBE) at low substrate temperature of 160 ℃. In-situ reflection high-energy electron diffraction (RHEED) was applied to monitor the surface structure and the crystallographic structure.

2：Sample Selection and Data Sources:

The Te nanomesh was grown on muscovite substrates by MBE. The muscovite was stripped with tape and annealed at 673K for 30 minutes in a high vacuum chamber before the growth.

3：List of Experimental Equipment and Materials:

MBE system equipped with a water-cooled high-temperature effusion cell for Te evaporation, ZEISS field emission scanning electron microscope ∑IGMA 500 for SEM imaging, Raman system with a 512 nm laser line as the excitation source, Keithley 4200 for electrochemical measurements.

4：Experimental Procedures and Operational Workflow:

The temperature of the substrate was decreased to 433 K and the temperature of the Te effusion cell was kept at 558K to make the metal Te evaporate with a stable flux. The sample and the base are bridged by a conductive adhesive to prevent charge buildup from affecting the observation.

5：Data Analysis Methods:

The photoelectric and piezoelectric effect were taken using Keithley 4200. The sample is connected to the Keithley 4200 via two probe stations.