摘要： The enhancement of optical transparency, crystalline perfection, laser damage threshold values and principally, mechanical strength of thiourea doped potassium bromide crystals grown under slow evaporation solution growth technique were assessed. The validation and morphology were done by X-ray diffraction analysis. The sample KTB crystallized in orthorhombic system is unique and novel. The vibrational range in the FT-IR affirmed the functional groups present in the title compound. The energy gap Eg found to be 4.12eV with broad transparency window between 300.600nm to 1100nm. Second harmonic studies manifest the suitability of the crystal for frequency conversion and doubling applications. The positive photo conducting nature of the material aspires that the sample would be more electrically conductive on the absorption of electromagnetic radiation. The laser damage threshold value indicates the aptness of the sample to confront against high power intensities. The elastic(C11), plastic, fracture traits(Kc) along with the yield strength(σv) and brittleness index(Bi) were calculated and reported for the first time under orthorhombic system. The result also evident appreciable mechanical strength of the crystal, as it holds cardinal importance in technological applications.