研究目的
Investigating the effect of the ZnO layer morphology on the performance of inverted quantum dot light-emitting diodes (QLEDs) using different spin-coating processes.
研究成果
The two-step spin-coating process for the ZnO layer in inverted QLEDs resulted in increased surface roughness and reduced current density, leading to a significant improvement in current efficiency despite a decrease in luminance. This demonstrates the importance of considering the surface morphology of each layer for achieving highly efficient QLEDs.
研究不足
The study focuses on the effect of ZnO layer morphology on QLED performance but does not explore the impact of other materials or layer structures. The optimization of the spin-coating process is specific to the materials and device structure used in this study.
1：Experimental Design and Method Selection:
The study involved the fabrication of inverted QLEDs with ZnO nanoparticles as the electron transport layer, using different spin-coating processes (one-step and two-step) to deposit the ZnO layer.
2：Sample Selection and Data Sources:
Indium-tin-oxide (ITO)-coated glass substrates were used for the fabrication of QLEDs. CdZnSeS/ZnS QDs were used as the emission layer.
3：List of Experimental Equipment and Materials:
Instruments included a spectroradiometer (Konica-Minolta CS-2000), a source meter (Keithley 2400), AFM (PSIA XE 100), TEM (JEOL JEM-2100F), and an X-ray diffractometer (Rigaku MiniFlex II). Materials included ZnO NPs, CdZnSeS/ZnS QDs, and organic materials for the HTL and ETL.
4：Experimental Procedures and Operational Workflow:
The ZnO NPs were synthesized and deposited on ITO substrates using one-step and two-step spin-coating processes. QDs were spin-cast on top of the ZnO layer, followed by the deposition of organic materials and metals by thermal evaporation.
5：Data Analysis Methods:
The electroluminescence spectra and current density–voltage–luminance characteristics were measured, and the surface profiles of the ZnO layer were analyzed using AFM.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容-
source meter
2400
Keithley
Measuring the current density–voltage characteristics of the QLEDs.
暂无现货
预约到货通知
-
TEM
JEM-2100F
JEOL
Obtaining images of the ZnO NPs.
暂无现货
预约到货通知
-
X-ray diffractometer
MiniFlex II
Rigaku
Obtaining the XRD pattern of the synthesized ZnO NPs.
立即获取同款设备 -
spectroradiometer
CS-2000
Konica-Minolta
Measuring the electroluminescence spectra and current density–voltage–luminance characteristics of the QLEDs.
暂无现货
预约到货通知
-
AFM
XE 100
PSIA
Measuring the surface profiles of the ZnO layer.
暂无现货
预约到货通知
-
登录查看剩余3件设备及参数对照表
查看全部
