研究目的
To propose and develop a heterogeneously integrated InGaN laser diode on a Si wafer for photonic integrated circuits.
研究成果
The study successfully proposes a heterogeneously integrated InGaN/TiO2 laser diode on Si, demonstrating the feasibility of mode transfer between hybrid InGaN/TiO2 sections and pure TiO2 waveguides with low coupling loss. Key fabrication technologies have been developed, though further optimization is needed for bonding and surface smoothness.
研究不足
The study faces challenges in GaN epitaxial wafer bonding due to surface roughness and the need for precise thickness control. The propagation loss of TiO2 waveguides has not been measured, and the etched surface morphology after GaN substrate removal is rough.
