研究目的
Investigating the improvement in quantum efficiencies of gallium phosphide (GaP) solar cell structures through modified liquid phase epitaxy (LPE) technique and the use of semi-transparent Schottky contacts.
研究成果
The addition of 0.1 at.% Al to the growth melt increased the fitted diffusion length of the UID LPE grown samples from 0.4 μm to 1.9 μm. The subsequent growth of an Al-rich AlGaP layer on top of the 0.1 at.% Al on LPE samples with selective etching in HCl produced a surface 12 times smoother than the as-grown surface. These improvements demonstrate the high potential for LPE GaP to be made as devices in the near future.
研究不足
The measured diffusion length fell significantly short of ideal results, possibly due to recombination in the substrate. Future work will use highly doped LPE 'back-surface-field' layers to separate the photo response properties of the thick, lightly doped LPE layers from the substrate.
