研究目的
To develop a new strategy for producing highly emissive nanodiamonds by chemical vapor deposition with controlled doping by SiV and GeV centers from a solid source, aiming for applications in quantum technologies.
研究成果
The study demonstrates the successful production of highly emissive nanodiamonds with controlled doping by SiV and GeV centers using a novel CVD approach. The optical properties at cryogenic temperatures show promising results for applications in quantum technologies.
研究不足
The limited ability to control doping level since the amount of sputtered material from the solid source cannot be easily measured nor varied during growth.
1：Experimental Design and Method Selection:
Nanodiamonds were grown by microwave plasma assisted chemical vapor deposition (MPACVD) using a H2/CH4 gas mixture with intentional addition of N2 or O
2：Sample Selection and Data Sources:
The nanodiamonds were collected from a molybdenum substrate holder and dispersed in an ethanol solution.
3：List of Experimental Equipment and Materials:
BJS150 model reactor by Plassys company, Zeiss Supra VP 40 SEM system, JEOL EM2010 TEM system, Jobin-Yvon HR800 spectrometer, Horiba HCLUE system for CL analysis.
4：Experimental Procedures and Operational Workflow:
The nanodiamonds were grown under fixed power and pressure conditions, collected after 6 hours of deposition, and characterized by SEM, TEM, Raman, PL, and CL.
5：Data Analysis Methods:
The optical properties were analyzed using a spectrometer equipped with a grating and a Pelletier-cooled CCD camera.
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