研究目的
Investigating the photoelectric properties of β-Ga2O3/BP pn heterojunction for solar-blind UV and IR dual-band photodetector.
研究成果
The β-Ga2O3/BP pn heterojunction demonstrates a remarkable spectral response under UV and IR irradiations, with potential applications in future UV/IR dual-band detection systems. The study provides insights into the photogeneration and photoresponse mechanisms of the heterojunction, suggesting avenues for further improvement in device performance.
研究不足
The performance of the device is limited by the crystalline quality of the heteroepitaxial β-Ga2O3 film, which contains many grain boundaries and dislocations. The response times under UV irradiation are longer than under IR irradiations due to the inferior crystalline quality of β-Ga2O3 compared to BP.
1：Experimental Design and Method Selection:
The study involves the fabrication of a UV/IR photodetector based on β-Ga2O3/BP pn heterojunction using MOCVD heteroepitaxial growth.
2：Sample Selection and Data Sources:
β-Ga2O3 film was heteroepitaxially grown on c-plane (0001) sapphire substrate, and BP was mechanically exfoliated and transferred to the active region.
3：List of Experimental Equipment and Materials:
MOCVD (TNSC-MOCVD SR4000), PECVD for SiO2 deposition, e-beam evaporation for electrode formation, and various characterization tools including AFM, XRD, Raman spectroscopy, spectrophotometer, and surface profiler.
4：Experimental Procedures and Operational Workflow:
The process includes substrate preparation, film growth, BP transfer, electrode deposition, and device characterization.
5：Data Analysis Methods:
Spectral response and temporal photoresponse measurements were conducted to analyze the device performance under UV and IR irradiations.
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