研究目的
Investigating the ferroelectric photovoltaic response characteristics of Lead Zirconate Titanate (PZT) thin film in metal-ferroelectric-metal (MFM) configuration under UV radiations.
研究成果
Single phase and good quality Lead Zirconate Titanate (PZT) thin film has been successfully deposited by chemical solution deposition technique, exhibiting good ferroelectric property and minimal defects. A large open circuit voltage of about 1.0 V and an increase in current by three orders in magnitude under UV illumination were observed, attributed to the novel design of the photovoltaic cell and the quality of the PZT film.
研究不足
The study is limited to the photovoltaic response under UV illumination and does not explore the response under other wavelengths. The power conversion efficiency is found to be low due to the highly insulating nature of PZT film.
1:Experimental Design and Method Selection:
The study involves the preparation of PZT thin films on inter-digital electrodes patterned silicon substrate using chemical solution deposition (CSD) technique followed by rapid thermal annealing. The photovoltaic response is measured under UV illumination.
2:Sample Selection and Data Sources:
PZT thin films are prepared on silicon substrates with silicon dioxide as an insulating layer. The substrates are cleaned and prepared using conventional photolithography technique.
3:List of Experimental Equipment and Materials:
Equipment includes X-Ray Diffraction (Rigaku, Ultima 4), UV–Visible spectrophotometer (PerkinElmer lamda 35), ferroelectric measurement system (PE loop tracer, Radiant), and semiconductor characterization unit (Keithly 4200 SCS). Materials include lead(II) acetate, zirconium (IV) isopropoxide, and Titanium isopropoxide.
4:Experimental Procedures and Operational Workflow:
The PZT thin film is deposited by spin coating PZT sol, followed by pyrolysis and rapid thermal annealing. The photovoltaic response is measured under UV illumination using a mercury arc lamp.
5:Data Analysis Methods:
The structural property is analyzed using X-Ray diffraction, optical property by UV–Visible spectrophotometer, ferroelectric properties by hysteresis loop measurements, and photovoltaic characteristics by semiconductor characterization unit.
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