研究目的
Investigating the highly self-oriented growth of (020) and (002) monoclinic HfO2 thick films using laser chemical vapor deposition.
研究成果
Highly (002)-oriented m-HfO2 films were produced using laser CVD at a deposition temperature of 1383 K, with a deposition rate of 67 μm h?1. The films exhibited a columnar microstructure with a feather-like texture, suitable for thermal barrier coatings and environmental barrier coatings.
研究不足
The study focuses on the preparation and characterization of m-HfO2 films on polycrystalline AlN substrates, and the findings may not be directly applicable to other substrates or conditions.
1：Experimental Design and Method Selection:
The study employed thermal and laser chemical vapor deposition (CVD) techniques to prepare m-HfO2 films on polycrystalline AlN substrates.
2：Sample Selection and Data Sources:
Polycrystalline AlN plates were used as substrates.
3：List of Experimental Equipment and Materials:
A diode laser (λ = 976 nm; continuous-wave mode; Lumics GmbH, LU0976C170) for laser CVD and a ceramic heater for thermal CVD. Hf(acac)4 was used as the precursor.
4：Experimental Procedures and Operational Workflow:
The substrate was heated using either a ceramic heater for thermal CVD or a diode laser for laser CVD. The substrate temperature during deposition was measured using an IR radiation thermometer.
5：Data Analysis Methods:
Phase composition of the films was characterized using X-ray diffraction. The microstructure was characterized using a scanning electron microscope and a transmission electron microscope.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
