研究目的
To quantify facet absorption in high-power diode lasers to improve their reliability and maximum output power.
研究成果
The combination of high-resolution thermal measurement using thermoreflectance microscopy and a detailed thermal model of diode lasers provides a powerful method to estimate the degree of optical absorption at the facet. This technique can be implemented for a wide range of diode lasers, irrespective of the presence of facet coatings and/or passivation layers, and can be used to track device degradation over time.
研究不足
The technique's effectiveness may be limited by parasitic effects observed in the reflectance signal, likely caused by photoelasticity, which can modify the reflection conditions at the facets of coated diode lasers.
1：Experimental Design and Method Selection:
The study uses a combination of facet thermoreflectance imaging and a heat transport model to measure facet absorption.
2：Sample Selection and Data Sources:
The device under test is a
3：5 W rated broad-area single emitter with 180 μm stripe width and 1500 μm cavity length, emitting near 800 nm. List of Experimental Equipment and Materials:
A custom microscope system with a 100X objective and CCD sensor, a blue LED with λ = 470 nm, and a two-dimensional finite element-based thermal model.
4：Experimental Procedures and Operational Workflow:
The diode laser is driven by a square wave current with 50% duty cycle at a frequency of 4 Hz. The camera acquires four images for every ON/OFF cycle to calculate the normalized change in reflectance.
5：Data Analysis Methods:
The thermoreflectance coefficient is measured for substrate, cladding, and waveguide samples to convert reflectance changes into temperature rise.
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