研究目的
Investigating the key attributes of double hetero junction tandem solar cell based on III-Nitride alloys and silicon to achieve high spectral efficiency and cost effectiveness.
研究成果
The study concludes that the proposed GaN/i-InGaN/t-InGaN/Si solar cell structure, with optimized parameters, achieves high efficiency and cost-effectiveness, making it a potential candidate for next-generation photovoltaics. The efficiency of 26.1% without polarization effect and 25.6% with polarization effect is achieved.
研究不足
The study acknowledges the importance of considering polarization charges, defect density, and 'In' concentration in the tunneling mechanism between InGaN and Si junction, which could affect the performance of the solar cell.
1：Experimental Design and Method Selection:
The study uses TCAD tool for simulating the GaN/i-InGaN/t-InGaN/Si multi-junction tandem solar cell.
2：Sample Selection and Data Sources:
The electrical and optical properties like band gap, absorption coefficient, resistivity, mobility and lattice constant are adopted from literature.
3：List of Experimental Equipment and Materials:
Silvaco TCAD tool is used for simulation.
4：Experimental Procedures and Operational Workflow:
The device structure is designed and simulated with variations in 'In' content, thickness of layers, and other parameters to optimize performance.
5：Data Analysis Methods:
Various models such as shockley-read-hall (SRH) recombination model, fermi-dirac model, auger recombination model, concentration dependent model, optical recombination model, bandgap narrowing carrier statistics models are incorporated.
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