研究目的
To study the degradation mechanism of GaN-based laser diodes, especially the reduction of the slope efficiency during aging.
研究成果
The reduction of the slope efficiency in GaN-based LDs is attributed to the increase of optical loss and decrease of current injection efficiency, induced by partial strain relaxation related defects generation in the waveguide and cladding layers. This strain relaxation partially compensates the Quantum-Confined Stark Effect (QCSE), leading to the reduction of blue-shift in the EL spectra.
研究不足
The study focuses on the degradation mechanism related to defects outside the active region, but the generation mechanism of these defects is not fully understood and requires further study.
1：Experimental Design and Method Selection:
The study uses Electroluminescence (EL) and Transmission Electron Microscopy (TEM) to investigate the degradation of GaN-based laser diodes.
2：Sample Selection and Data Sources:
InGaN/GaN blue LDs grown on c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD) are used.
3：List of Experimental Equipment and Materials:
TEM, EL measurement setup, GaN-based LDs.
4：Experimental Procedures and Operational Workflow:
The LDs are aged under high current stress of 300 mA at 45℃. Optical loss is characterized before and after aging.
5：5℃. Optical loss is characterized before and after aging. Data Analysis Methods:
5. Data Analysis Methods: The internal loss coefficients are evaluated from the low energy side of the spectra. The peak energy and linewidth dependence on injection current are analyzed.
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