研究目的
To systematically investigate the origin of bypass diode faults in crystalline silicon (c-Si) photovoltaic (PV) modules operated outdoors, focusing on the effects of high surrounding temperature on the leakage current and subsequent failure mechanisms.
研究成果
The study concludes that high surrounding temperatures significantly increase the leakage current in bypass diodes, leading to thermal runaway and diode failure. Designing junction boxes for better heat dissipation and evaluating bypass diodes under high-temperature conditions are recommended to minimize failures.
研究不足
The study is limited to Schottky-type bypass diodes in c-Si PV modules under specific environmental conditions. The experimental setup may not fully replicate all outdoor conditions, and the long-term effects of leakage current on diode failure require further investigation.
1：Experimental Design and Method Selection:
The study involved monitoring the temperature inside the junction box of PV modules installed outdoors and measuring the leakage current of bypass diodes under various temperatures and reverse bias voltages.
2：Sample Selection and Data Sources:
Bypass diodes that had passed certification standards were used. Temperature data were collected from PV modules installed in Daejeon, South Korea, over one year.
3：List of Experimental Equipment and Materials:
Equipment included a power supply, current-measurement equipment (Dewetron-2600), shunt resistance, and an environmental chamber.
4：Experimental Procedures and Operational Workflow:
The leakage current under reverse bias was monitored at various temperatures (25, 40, 60, 80, or 100 ?C) and reverse bias voltages (10, 15, or 20 V).
5：Data Analysis Methods:
The leakage current data were analyzed to understand the relationship between temperature, reverse bias voltage, and leakage current.
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