研究目的
Investigating the peculiarities of the electronic spectra of semiconductor quantum dots based on multicomponent compounds A2B6 and A3B5, and estimating the position of the first three levels in their electron spectrum.
研究成果
The study successfully estimated the position of the first three levels in the electron spectrum of quantum dots in semiconductor materials A3B5 (InSb) and A2B6 (CdSe), with good qualitative and quantitative agreement between experimental results and theoretical estimates. This confirms the validity of the model assumptions used.
研究不足
The study's limitations include the potential for not uniformly structured quantum dots or complex conglomerates of particles to complicate data interpretation, despite the use of complementary TEM and STM methods.
1：Experimental Design and Method Selection:
The study involved experimental and theoretical analysis of semiconductor quantum dots using scanning tunneling microscopy (STM) and transmission electron microscopy (TEM). Theoretical models were used to estimate electron energy levels.
2：Sample Selection and Data Sources:
Samples included monolayers of quantum dots with structures CdSe/CdS/ZnS and InSb film samples containing quantum dots.
3：List of Experimental Equipment and Materials:
Scanning probe microscope SPM NANOEDUCATOR-I was used for STM studies.
4：Experimental Procedures and Operational Workflow:
Film samples were prepared and examined by TEM and STM. The normalized differential current-voltage characteristics (D-CVC) were analyzed to study electron energy levels.
5：Data Analysis Methods:
The dependence (dI/dV)/(I/V) of the voltage V was used for analyzing experimental tunneling current-voltage characteristics.
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