研究目的
Investigating the luminescent and structural properties of electron-irradiated silicon light-emitting diodes with dislocation-related luminescence to understand the nature of defects responsible for the DRL and for determining the optimal conditions for fabrication of effective LEDs with DRL at room temperature.
研究成果
The study detailed the dislocation-related EL spectra in LEDs based on Si irradiated with low-energy electrons and annealed at high temperatures, showing that the spectra can be described by six Gaussian curves. The dislocation structure consists of gliding 60?-dislocations and perfect and faulted dipoles, with faulted dipoles potentially enhancing the intensity of D3-D4 lines.
研究不足
The study is limited by the specific conditions of electron irradiation and annealing, which may not be universally applicable. The nonuniform introduction of dislocations and the presence of dislocation-free regions could affect the consistency of the results.
1：Experimental Design and Method Selection:
The study involved irradiating p-Cz-Si wafers with low-energy electrons and annealing them in a chlorine-containing atmosphere at 1100°C. Layers of polycrystalline silicon doped with phosphorus and boron were deposited by vapour-phase epitaxy to form p-n junctions and ohmic contacts.
2：Sample Selection and Data Sources:
p-Si (100) wafers grown by the Czochralski method with a resistivity of ~ 4 ? cm were used.
3：List of Experimental Equipment and Materials:
A vacuum chamber for electron irradiation, an automated spectrometer based on an MDR-23 monochromator, and an uncooled InGaAs photodiode for EL measurements. Transmission electron microscopy (JEOL4000EX) was used for examining extended defects.
4：Experimental Procedures and Operational Workflow:
The wafers were irradiated with a beam of 8 keV electrons, annealed, and then layers of doped polycrystalline silicon were deposited. EL spectra were measured at 64 K with current pulses up to 200 mA.
5：Data Analysis Methods:
The EL spectra were decomposed into six Gaussian curves to analyze the transformation of spectra with current.
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