摘要： Current efforts have been given to develop new photovoltaic materials to improve the efficiency with reducing cost. The factors that have been taken into account in developing new photovoltaic materials include: a suitable energy band gap, the possibility of depositing the material using low cost deposition methods, abundance of the elements and low environmental costs with respect to the synthesis of the elements, production, operation and disposal of modules. It’s been a long time that continuous efforts has been given to find out the most appropriate material to be employed as absorber material for solar cell and some advanced material has been proposed too as potential solar cell material. Here in our present study we have taken Cu2-xS as a suitable p-type absorber layer material but the formation of stable Cu2-xS film was being difficult task. Different researchers proposed different methods among them we have found the elemental stacked layer deposition method is one of the promising technique. But this technique requires further optimization on thickness and layer no’s to get the best result with required stoichiometry. With this context we have tried to optimize the thickness and layer no’s for developing multilayer Cu2-xS thin film on the glass substrate by physical vapour deposition technique. The results obtained in this method shows that the optimum numbers of layer is 10 ensures formation of crystalline Cu2S structure with optical band gap is around 1.65 eV to 1.85 eV by different characterization technique like XRD, EDX, SEM, Spectrophotometry and PL. The I-V characteristic of Schotkey junction using silver and bulk resistance (ρb) with the sample shows semiconductor behaviour of the same. To the best of our knowledge this is the first time such type of nano-structured Cu2S film fabrication is reported.