摘要： Developing a scalable method to fabricate atomic wires is an important step for building solid-state semiconductor quantum computers. In this work, we developed a selective doping strategy by patterning the self-assembled monolayer to a few nanometers using standard nanofabrication processes, which significantly improves the lateral doping resolution of monolayer doping (MLD) from microscale to nanoscale. Using this method, we further explore the possibility to fabricate phosphorus wires in silicon by patterning self-assembled diethyl vinylphosphonate monolayers into lines with a width ranging from 500 nm to 10 nm. The phosphorus dopants are driven into silicon by rapid thermal annealing, forming dopant wires. Four-probe and Hall effect measurements are employed to characterize the dopant wires. The results show that the conductance is linear with the width for the wires, showing the success of the monolayer patterning process to nanoscale. To fabricate atomic wires made of one or a few lines of phosphorus atoms, we need to significantly shorten the thermal diffusion length and increase the dopant incorporation rate at the same time. Pulsed laser annealing may be a promising solution. The present work provides a promising pathway for mass fabrication of atomic wires in silicon that may find important applications in quantum computing.