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MXene Quantum Dot/Polymer Hybrid Structures with Tunable Electrical Conductance and Resistive Switching for Nonvolatile Memory Devices

DOI:10.1002/aelm.201900493 期刊:Advanced Electronic Materials 出版年份:2019 更新时间:2025-09-12 10:27:22
摘要: Low-dimensional MXene materials including MXene quantum dots (MQDs) and nanosheets have attracted extensive attention owing to their unique structures and novel properties, but their most attractive features are still less explored than expected. A systematic study of the memory effects of MQD-based electronics is reported. Monodisperse MQDs are prepared by using a one-step facile hydrothermal synthetic method. By varying the MQD content in polyvinylpyrrolidone (PVP) hybrid composite films, the electrical conductance of an indium tin oxide (ITO)/MQD-PVP/gold (Au) sandwich structure can be tuned precisely from insulator behavior to irreversible resistive switching, reversible resistive switching, and conductor behavior. These irreversible and reversible resistive switches are capable of exhibiting write-once-read-many times (WORM) and flash memory effects, respectively. Both types of devices operate stably under retention testing, with a high on/off current ratio up to 100. The tunable memory and transient features of these hybrid films are likely due to MQD charge trapping due to their quantum confinement and dissolvability of memristive components. The results suggest that MXene nanomaterials are promising as resistive switching trigger for emerging nonvolatile memories for data storage, specially data storage security.
作者: Huiwu Mao,Chen Gu,Shiqi Yan,Qian Xin,Shuai Cheng,Peng Tan,Xiangjing Wang,Fei Xiu,Xiaoqin Liu,Juqing Liu,Wei Huang,Linbing Sun
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To systematically study the memory effects of MQD-based electronics and explore the potential of MXene nanomaterials as resistive switching triggers for emerging nonvolatile memories for data storage.

The study successfully demonstrated that by varying MQDs content in MQDs-PVP hybrid composite films, the electrical conductance of ITO/MQDs-PVP/Au sandwich structures can be precisely tuned from insulator behavior to irreversible resistive switching, reversible resistive switching, and conductor behavior. The devices exhibited nonvolatile WORM and Flash memory effects, operating stably under retention testing with a high on/off current ratio up to 100. The results suggest that MXene nanomaterials are promising for emerging nonvolatile memories for data storage, especially for data storage security.

The study focuses on the electrical conductance and memory effects of MQD-based devices but does not extensively explore the scalability or integration of these devices into larger systems. The transient properties of the devices, while promising for data storage security, may limit their application in non-transient scenarios.

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