研究目的
To systematically study the memory effects of MQD-based electronics and explore the potential of MXene nanomaterials as resistive switching triggers for emerging nonvolatile memories for data storage.
研究成果
The study successfully demonstrated that by varying MQDs content in MQDs-PVP hybrid composite films, the electrical conductance of ITO/MQDs-PVP/Au sandwich structures can be precisely tuned from insulator behavior to irreversible resistive switching, reversible resistive switching, and conductor behavior. The devices exhibited nonvolatile WORM and Flash memory effects, operating stably under retention testing with a high on/off current ratio up to 100. The results suggest that MXene nanomaterials are promising for emerging nonvolatile memories for data storage, especially for data storage security.
研究不足
The study focuses on the electrical conductance and memory effects of MQD-based devices but does not extensively explore the scalability or integration of these devices into larger systems. The transient properties of the devices, while promising for data storage security, may limit their application in non-transient scenarios.
1:Experimental Design and Method Selection:
The study involved the synthesis of monodisperse MQDs using a one-step facile hydrothermal synthetic method and the fabrication of ITO/MQD-PVP/Au sandwich structures to investigate their electrical conductance and memory effects.
2:Sample Selection and Data Sources:
MQDs were synthesized from Ti3AlC2 MAX phase powder, and hybrid composite films were prepared by varying the MQD content in PVP.
3:List of Experimental Equipment and Materials:
Materials included Ti3AlC2 MAX phase powder, PVP, ITO, ethanol, HF solution, and Au for electrode deposition. Equipment included a Bruker D8 Advance diffractometer, Hitachi S4800 electron microscope, JEM-200CX electron microscope, Tecnai 12 electron microscope, Pekin Elmer Lambda 950, PHI 5000 VersaProbe, Fluorescence Spectrometer (F-4600), Shimadzu UV-1750 spectrophotometer, Atomic force microscope (XE-100, Park SYSTEMS), and Keithley 4200 semiconductor parameter analyzer.
4:Experimental Procedures and Operational Workflow:
The synthesis of MQDs involved HF etching of Ti3AlC2 powders, followed by hydrothermal treatment. MQDs-PVP hybrid nanomaterials were prepared by dispersing MQDs in ethanol containing PVP. Memory devices were fabricated by spin-coating MQDs-PVP films onto ITO electrodes and depositing a top Au electrode.
5:Data Analysis Methods:
Electrical behaviors and memory effects were characterized by current-voltage (I-V) measurements. The carrier conduction and switching mechanisms were investigated by log I-log V plots.
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JEM-200CX electron microscope
JEM-200CX
JEOL
Performing transmission electron microscopy (TEM)
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Tecnai 12 electron microscope
Tecnai 12
FEI
Performing transmission electron microscopy (TEM)
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Pekin Elmer Lambda 950
Lambda 950
PerkinElmer
Performing UV–visible absorption (UV–vis) spectrum
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Fluorescence Spectrometer
F-4600
Hitachi
Performing photoluminescence (PL) spectrum
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Shimadzu UV-1750 spectrophotometer
UV-1750
Shimadzu
Measuring absorption spectra
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Keithley 4200 semiconductor parameter analyzer
4200
Keithley
Conducting I–V measurements
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Bruker D8 Advance diffractometer
D8 Advance
Bruker
Recording X-ray diffraction (XRD) patterns of the materials
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Hitachi S4800 electron microscope
S4800
Hitachi
Recording scanning electronic microscopy (SEM) images
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PHI 5000 VersaProbe
5000 VersaProbe
ULVAC-PHI
Recording X-ray photoelectron spectroscopy (XPS) spectrum
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Atomic force microscope
XE-100
Park SYSTEMS
Operating in the Noncontact mode
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