研究目的
Investigating the influence of Si-doping on the performance of InGaN/GaN multiple quantum well solar cells.
研究成果
The study concludes that slight Si-doping in GaN barriers improves the transport properties and conversion efficiency of InGaN/GaN MQW solar cells, but heavy doping degrades crystal quality and performance. The optimal Si-doping concentration was found to be 4 × 1017 cm–3.
研究不足
The study is limited by the degradation of crystal quality at high Si-doping concentrations, which adversely affects the solar cell performance. Additionally, the series resistance is still over large compared to reported values, indicating a need for optimization of contact layers.
1：Experimental Design and Method Selection:
The study involved growing MQW photovoltaic structures on c-plane sapphire by metal-organic chemical vapor deposition (MOCVD) with varying Si-doping concentrations in GaN barriers.
2：Sample Selection and Data Sources:
Five groups of samples with different Si doping concentrations were grown.
3：List of Experimental Equipment and Materials:
A Thomas Swan reactor for MOCVD, Bede D1 high-resolution X-ray diffractometer (HRXRD) for characterization, and standard lithography procedures for processing samples into solar cells.
4：Experimental Procedures and Operational Workflow:
The samples were characterized by HRXRD, processed into solar cells, and their performance was measured under dark and illuminated conditions.
5：Data Analysis Methods:
The performance metrics such as external quantum efficiency (EQE), short circuit current density (Jsc), open circuit voltage (Voc), and fill factor (FF) were analyzed.
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