研究目的
Investigating the effect of deep ultraviolet (UV) laser on physical and electrical properties of amorphous Silicon‐doped tin oxide (a‐STO) thin films.
研究成果
Deep UV laser treatment improved the quality of a‐STO thin films by increasing their density while maintaining low roughness and an amorphous structure. The treatment also increased oxygen vacancy content and broadened the optical band gap, suggesting potential improvements in electrical properties.
研究不足
The study does not explore the long‐term stability of the treated films or the scalability of the laser treatment process for industrial applications.
1：Experimental Design and Method Selection:
The study involved treating a‐STO thin films with a 266‐nm deep UV laser to investigate its effects on the films' physical and electrical properties.
2：Sample Selection and Data Sources:
a‐STO thin films were prepared by magnetron sputtering on glass substrates.
3：List of Experimental Equipment and Materials:
The films were treated using a 266‐nm deep UV laser instrument (AWAVE‐266‐1W20K, Inno Laser Company).
4：Experimental Procedures and Operational Workflow:
The films were treated with laser energy densities of 50, 60, and 70 mJ/cm2, with the beam scanning the entire film by lateral movement.
5：Data Analysis Methods:
The phase, thickness, density, and roughness of the films were measured using X‐ray reflectometry (XRR), atomic force microscope (AFM), X‐ray photoelectron spectrometer (XPS), and UV‐Vis spectrophotometer.
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