研究目的
To investigate photovoltaic effects in a gap-mode plasmon-induced photonic device by using multilayer graphene (MLG) as an active layer for photoexcited carrier generation as well as a reliable ultrathin spacer for gap-mode plasmon enhancement.
研究成果
The study demonstrates a significant photovoltaic effect in a vertically stacked MLG structure enhanced by gap-mode plasmons, overcoming the trade-off between photoresponsivity and response time. The findings suggest that such structures can serve as a platform for efficient 2D materials-based optoelectronic devices.
研究不足
The study notes that too many layers of MLG could weaken the gap-mode plasmonic effect, and the optimal number of layers needs further investigation. Additionally, the potential of various 2D materials to enhance the photovoltaic effect in the device structure was not explored.
1：Experimental Design and Method Selection:
The study involves the fabrication of a vertical device structure with MLG sandwiched between metallic nanoparticles and metallic films to investigate the photovoltaic effect induced by gap-mode plasmons.
2：Sample Selection and Data Sources:
MLG films were synthesized using ICP-CVD and transferred onto substrates with Au-NPs and ITO electrodes.
3：List of Experimental Equipment and Materials:
Equipment includes a thermal evaporator for Au-NP deposition, an electron beam evaporator for Ni film deposition, and a source measure unit for electrical characterization. Materials include MLG, Au, Ag, Al for electrodes, and ITO for the bottom electrode.
4：Experimental Procedures and Operational Workflow:
The process involves the deposition of ITO electrodes, Au-NPs, MLG transfer, and top electrode deposition, followed by annealing and photoelectric measurement under laser illumination.
5：Data Analysis Methods:
Photocurrent measurements were conducted at different wavelengths, and numerical simulations were performed using COMSOL software to calculate light absorption in MLG.
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