研究目的
To obtain high-quality GaN epitaxial film on (?2 0 1) β-Ga2O3 substrate using periodic SiO2 nanosphere monolayer for nanoscale epitaxial lateral overgrowth (NELOG) of GaN film.
研究成果
The introduction of periodic self-assembled SiO2 nanosphere monolayer significantly improves the quality of GaN epitaxial films on β-Ga2O3 substrates, reducing threading dislocation densities and stress, and enhancing optical properties.
研究不足
The study focuses on the improvement of GaN epitaxial growth on β-Ga2O3 substrate using SiO2 nanospheres but does not extensively explore the effects of varying experimental conditions such as V/III ratio, temperature, and pressure on the lateral growth process.
1：Experimental Design and Method Selection:
The study involves the self-assembly of SiO2 nanosphere monolayer on β-Ga2O3 substrate followed by ICP etching to create SiO2-NPGS for GaN epitaxial growth.
2：Sample Selection and Data Sources:
β-Ga2O3 substrates were used with SiO2 nanospheres of 600-nm diameter.
3：List of Experimental Equipment and Materials:
MOCVD chamber, Trimethylgallium (TMGa), NH3, ICP etching equipment with CF
4：Experimental Procedures and Operational Workflow:
The process includes self-assembly of SiO2 nanospheres, ICP etching, GaN buffer layer growth, and n-GaN layer growth under optimized conditions.
5：Data Analysis Methods:
XRD, Raman spectroscopy, PL, and TEM were used to analyze the structural and optical properties of the GaN films.
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