研究目的
Investigating a novel technique for recording local distributions of refractive indices using the phase shift upon total internal reflection and a Fabry-Pérot microcavity.
研究成果
The semiconductor sensor scheme was proven effective in measuring the resonance wavelength for different adjacent media, showing a sensitivity of about 30 nm/RIU. Simulations suggest that with an optimized layer structure, the sensitivity can exceed 500 nm/RIU.
研究不足
The sensitivity can exceed 500 nm/RIU with an optimized layer structure, indicating potential areas for optimization in layer structure design.
1：Experimental Design and Method Selection:
The approach relies on the phase shift upon total internal reflection (TIR) and uses an extremely short Fabry-Pérot microcavity.
2：Sample Selection and Data Sources:
Adjacent media being air, water, and sugar water.
3：List of Experimental Equipment and Materials:
Semiconductor sensor device, high-index glass prism, index-matching fluid, GaAs substrate, GaAs-AlAs Bragg reflector, InGaAs quantum well (QW).
4：Experimental Procedures and Operational Workflow:
The refractive index of the adjacent medium is obtained by measuring the reflectivity spectrum of the system to determine the resonance wavelength.
5：Data Analysis Methods:
The measurement data are compared with simulation results.
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