研究目的
To demonstrate a simple process for making high-purity solar-grade silicon films directly from silicon dioxide via a one-step electrodeposition process in molten salt for possible photovoltaic applications, aiming to reduce the silicon wafer cost and energy consumption.
研究成果
The study demonstrates a simple molten salt electrodeposition process for preparing crystalline silicon films for low-cost solar cells. The electrodeposited silicon films exhibit high purity and clear photovoltaic effects, with potential for further optimization to improve power conversion efficiency. This technology offers a promising approach for reducing the cost of silicon solar cells.
研究不足
The growth rate of silicon films is not constant during the electrodeposition process, and small amounts of silicon powders generate on the surface of silicon films, lowering the film formation efficiency. The current efficiency for the formation of silicon film is about 60 to 80%, depending on the growth rate.
1：Experimental Design and Method Selection:
The study employs a one-step electrodeposition process in molten calcium chloride from silicon dioxide for producing high-purity silicon films. The process involves the use of calcium oxide as an intermediate for the ionization of silicon dioxide to form silicate ions, which are then electrodeposited onto substrates.
2：Sample Selection and Data Sources:
Silicon dioxide, calcium oxide, and calcium chloride mixtures were homogenized to form a molten electrolyte at 850°C. Various dopants were added to control the doping type of the silicon films.
3：List of Experimental Equipment and Materials:
High-purity quartz crucible, graphite plate as substrate, graphite rod as anode, tungsten wires as electrode leads, and high-purity argon gas for atmosphere control.
4：Experimental Procedures and Operational Workflow:
The electrodeposition was carried out at 10–20 mA cm?2 in a two-electrode manner. The process included pre-electrolysis to purify the molten salt, followed by the electrodeposition of silicon films under controlled conditions.
5：Data Analysis Methods:
The deposited silicon films were characterized using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), glow discharge mass spectrometry (GDMS), and X-ray diffraction spectroscopy (XRD). Photoelectrochemical (PEC) measurements were conducted to assess the quality of the silicon films.
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