研究目的
Investigating the electrostatic potential variation across etched-and-regrown GaN p-i-n diodes for power electronics to understand the charge distribution at various interfaces and the impact of impurities on diode performance.
研究成果
The study demonstrates a correlation between electrostatic potential profiles and impurity distributions at regrown interfaces in GaN p-i-n diodes. The introduction of an undoped layer improves diode performance by preventing the formation of highly doped p-n junctions at regrowth interfaces. This insight is crucial for the design of GaN-based power devices.
研究不足
The study is limited by the resolution of electron holography and SIMS, potential artifacts from sample preparation, and the complexity of impurity interactions at regrown interfaces.
1：Experimental Design and Method Selection:
The study utilized electron holography in a transmission electron microscope to analyze electrostatic potential variations and correlated these with composition profiles obtained by secondary ion mass spectroscopy (SIMS).
2：Sample Selection and Data Sources:
GaN p-i-n structures were grown by metal-organic chemical vapor deposition (MOCVD) on n-GaN substrates. Samples included continuously grown and etched-and-regrown diodes with different i-GaN thicknesses.
3：List of Experimental Equipment and Materials:
FEI Titan microscope for electron holography, SIMS for composition profiling, MOCVD for sample growth, and ICP for etching.
4：Experimental Procedures and Operational Workflow:
TEM specimens were prepared by wedge polishing and thinned to electron transparency. Electron holograms were acquired under weakly diffracting conditions. SIMS measurements were performed to obtain dopant profiles.
5：Data Analysis Methods:
Electrostatic potential was calculated from phase shifts obtained via electron holography. Charge distribution was derived using Poisson's equation.
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