研究目的
To design and fabricate a new modified stack layer for CZTSe solar cells that avoids rough surfaces, voids, and small-grained structures near the Mo back contact, aiming for high efficiency Cd-free CZTSe solar cells.
研究成果
The newly designed type-IV stack layer produced CZTSe absorbers with high crystal quality, free from voids and small-grained structures near the bottom. The (Zn,Sn)O-buffered CZTSe solar cell achieved a PCE of 8.31%, comparable to the 8.84% of the CdS-buffered cell, indicating the potential for high-efficiency Cd-free CZTSe solar cells.
研究不足
The study focuses on the fabrication and characterization of CZTSe solar cells with a specific modified stack layer. The performance comparison is limited to cells with CdS and (Zn,Sn)O buffers. The impact of other buffer materials or fabrication methods is not explored.
1：Experimental Design and Method Selection:
The study involved designing and fabricating four different precursor Cu-Zn-Sn films on Mo-coated soda-lime glass, followed by post-selenization to form CZTSe absorbers. Two types of CZTSe solar cells were made, one with a CdS buffer and the other with a (Zn,Sn)O buffer.
2：Sample Selection and Data Sources:
Four different precursor films (Type-I to Type-IV) were prepared and selenized. The fabricated absorbers were characterized using FE-SEM, EDS, XRD, Raman spectroscopy, PL, and TRPL measurements.
3：List of Experimental Equipment and Materials:
FE-SEM (JSM-7001F, JEOL), EDS (Aztec, Oxford Instruments), Raman system (Alpha 300R, WITec), XRD machine (Smartlab, Rigaku), PL lifetime measurement system (C12132, Hamamatsu), solar simulator (Abet Tech.), and EQE system (Mcscience Inc.).
4：Experimental Procedures and Operational Workflow:
Precursor films were deposited by rf sputtering, selenized in a graphite box with Se powder, and characterized. Solar cells were fabricated with CdS or (Zn,Sn)O buffers and tested for performance.
5：Data Analysis Methods:
The quality of the CZTSe absorbers was analyzed using XRD, Raman spectroscopy, PL, and TRPL. Solar cell performance was evaluated through J-V and EQE measurements.
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