研究目的
Investigating the effects of KrF excimer laser doping on 4H-SiC power devices for high-concentration Al doping and low contact resistivity.
研究成果
The KrF excimer laser doping system successfully achieved high-concentration Al doping (~1021 cm?3) in SiC, with low contact resistivity (1.9 × 10?4 Ωcm2) and high built-in potential (~3.5 V) in the pn junction diode. This method offers a low-cost alternative to traditional ion implantation for SiC power device fabrication.
研究不足
The Al depth profile was shallow (~20 nm), which may limit the application for devices requiring deeper doping. The contact resistivity, although low, needs to be further reduced for applications requiring minimal resistance loss.
1：Experimental Design and Method Selection:
A novel KrF excimer laser doping system was developed for doping SiC with Al film in ambient Ar. The system includes a vacuum chuck stage for a six-inch wafer and a high-speed XY scanning stage.
2：Sample Selection and Data Sources:
SiC composed of an n-epitaxial layer (~3 μm)/ n-type substrate (~350 μm) was used. An Al film (240 nm) was deposited on the surface by DC sputtering.
3：List of Experimental Equipment and Materials:
KrF excimer laser (Gigaphoton Inc., wavelength: 248 nm, pulse-width: 15 ns at FWHM), Ar gas nozzle, vacuum chuck stage, XY scanning stage, optical pulse stretcher with optical delay system.
4：Experimental Procedures and Operational Workflow:
The beam size was 1000 μm × 300 μm, and the repetition rate was 100 Hz. Scan exposure was performed by scanning along the short axis direction of the laser beam. After irradiation, Al film at the non-irradiated region was removed by a diluted hydrofluoric acid solution.
5：Data Analysis Methods:
The electrical properties were analyzed using I-V curves, SIMS for Al concentration depth profile, Raman spectra for crystalline damage assessment, and TLM for contact resistivity measurement.
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