研究目的
Investigating the effects of uniaxial tensile strain on GeSn layers for laser applications, demonstrating lasing cavities with tunable wavelengths and low thresholds.
研究成果
The study successfully demonstrates the inversion and enhancement of uniaxial tensile strain in GeSn layers, leading to lasing cavities with a broad wavelength tunability from 3.1 to 4.6μm and thresholds lower than 10 kW.cm-2 at 25K. Laser operation is observed up to 273K, indicating potential for room temperature applications with further optimization.
研究不足
Laser operation is limited to temperatures up to 273K, and the study is conducted in pulsed excitation mode, which may not fully represent continuous operation conditions.
1：Experimental Design and Method Selection:
The study involves the use of strain redistribution to locally enhance strain in GeSn layers, creating microbridges with lasing cavities.
2：Sample Selection and Data Sources:
The samples consist of GeSn resonators with central waveguides and face-to-face corner cube mirrors, fabricated on a thinned-down Silicon On Insulator substrate.
3：List of Experimental Equipment and Materials:
GeSn layers, Ge stretching arms, and a series of lithography and etching steps are used.
4：Experimental Procedures and Operational Workflow:
The process includes partial selective etching of Ge over GeSn, device release via Buried Oxide etching, and optical pumping in both continuous wave and pulsed modes.
5：Data Analysis Methods:
PhotoLuminescence (PL) spectra are recorded to analyze the effects of strain on the GeSn layers.
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